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| savantic semiconductor product specification silicon npn power transistors 2SD641 d escription with to-3 package high voltage ,high speed applications converters inverters switching regulators motor controls pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i cm collector current-peak 30 a i b base current 6 a p t total power dissipation t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD641 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =10a; i b =2a 1.5 v v besat base-emitter saturation voltage i c =10a; i b =2a 2.0 v i cbo collector cut-off current v cb =500v; i e =0 0.5 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =5a ; v ce =5v 20 140 f t transition frequency i c =0.5a ; v ce =10v 4 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 150 pf savantic semiconductor product specification 3 silicon npn power transistors 2SD641 package outline fig.2 outline dimensions |
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